JPS6153861B2 - - Google Patents

Info

Publication number
JPS6153861B2
JPS6153861B2 JP53106186A JP10618678A JPS6153861B2 JP S6153861 B2 JPS6153861 B2 JP S6153861B2 JP 53106186 A JP53106186 A JP 53106186A JP 10618678 A JP10618678 A JP 10618678A JP S6153861 B2 JPS6153861 B2 JP S6153861B2
Authority
JP
Japan
Prior art keywords
region
source
semiconductor body
body portion
drain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP53106186A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5452994A (en
Inventor
Daburyu Miruroie Suteiibu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Publication of JPS5452994A publication Critical patent/JPS5452994A/ja
Publication of JPS6153861B2 publication Critical patent/JPS6153861B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs
    • H10D84/403—Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors
    • H10D84/406—Combinations of FETs or IGBTs with vertical BJTs and with one or more of diodes, resistors or capacitors

Landscapes

  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)
JP10618678A 1977-08-30 1978-08-30 Semiconductor Granted JPS5452994A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/828,999 US4143392A (en) 1977-08-30 1977-08-30 Composite jfet-bipolar structure

Publications (2)

Publication Number Publication Date
JPS5452994A JPS5452994A (en) 1979-04-25
JPS6153861B2 true JPS6153861B2 (en]) 1986-11-19

Family

ID=25253257

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10618678A Granted JPS5452994A (en) 1977-08-30 1978-08-30 Semiconductor

Country Status (4)

Country Link
US (1) US4143392A (en])
EP (1) EP0000975B1 (en])
JP (1) JPS5452994A (en])
DE (1) DE2861510D1 (en])

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4314267A (en) * 1978-06-13 1982-02-02 Ibm Corporation Dense high performance JFET compatible with NPN transistor formation and merged BIFET
US4322738A (en) * 1980-01-21 1982-03-30 Texas Instruments Incorporated N-Channel JFET device compatible with existing bipolar integrated circuit processing techniques
US4395812A (en) * 1980-02-04 1983-08-02 Ibm Corporation Forming an integrated circuit
US4362574A (en) * 1980-07-09 1982-12-07 Raytheon Company Integrated circuit and manufacturing method
JPS57501656A (en]) * 1980-10-28 1982-09-09
US4916505A (en) * 1981-02-03 1990-04-10 Research Corporation Of The University Of Hawaii Composite unipolar-bipolar semiconductor devices
JPH0750560B2 (ja) * 1981-05-09 1995-05-31 ヤマハ株式会社 ディジタル集積回路装置
US4441116A (en) * 1981-07-13 1984-04-03 National Semiconductor Corporation Controlling secondary breakdown in bipolar power transistors
US4495694A (en) * 1981-10-06 1985-01-29 Harris Corporation Method of fabricating an isolated gate JFET
US4456918A (en) * 1981-10-06 1984-06-26 Harris Corporation Isolated gate JFET structure
US4485392A (en) * 1981-12-28 1984-11-27 North American Philips Corporation Lateral junction field effect transistor device
US4729008A (en) * 1982-12-08 1988-03-01 Harris Corporation High voltage IC bipolar transistors operable to BVCBO and method of fabrication
JPS61158177A (ja) * 1984-12-28 1986-07-17 Toshiba Corp 半導体装置
JPS62119972A (ja) * 1985-11-19 1987-06-01 Fujitsu Ltd 接合型トランジスタ
US4808547A (en) * 1986-07-07 1989-02-28 Harris Corporation Method of fabrication of high voltage IC bopolar transistors operable to BVCBO
US4876579A (en) * 1989-01-26 1989-10-24 Harris Corporation Low top gate resistance JFET structure
US5191401A (en) * 1989-03-10 1993-03-02 Kabushiki Kaisha Toshiba MOS transistor with high breakdown voltage
EP0435541A3 (en) * 1989-12-26 1991-07-31 Motorola Inc. Semiconductor device having internal current limit overvoltage protection
DE10206133C1 (de) * 2002-02-14 2003-09-25 Infineon Technologies Ag Vertikaler Bipolartransistor mit innewohnendem Junction-Feldeffekttransistor (J-FET)
US7518194B2 (en) * 2006-05-20 2009-04-14 Sergey Antonov Current amplifying integrated circuit
TWI408808B (zh) * 2007-10-24 2013-09-11 Chun Chu Yang 同軸電晶體結構
US8481372B2 (en) * 2008-12-11 2013-07-09 Micron Technology, Inc. JFET device structures and methods for fabricating the same
KR101807334B1 (ko) 2013-04-12 2018-01-11 매그나칩 반도체 유한회사 멀티 소오스 jfet 디바이스
US10784372B2 (en) * 2015-04-03 2020-09-22 Magnachip Semiconductor, Ltd. Semiconductor device with high voltage field effect transistor and junction field effect transistor
KR101975630B1 (ko) * 2015-04-03 2019-08-29 매그나칩 반도체 유한회사 접합 트랜지스터와 고전압 트랜지스터 구조를 포함한 반도체 소자 및 그 제조 방법
KR102401162B1 (ko) 2021-05-20 2022-05-24 주식회사 키파운드리 폴리-실리콘 접합 전계 효과 트랜지스터를 포함하는 반도체 소자 및 이의 제조 방법

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4048649A (en) * 1976-02-06 1977-09-13 Transitron Electronic Corporation Superintegrated v-groove isolated bipolar and vmos transistors
US4066917A (en) * 1976-05-03 1978-01-03 National Semiconductor Corporation Circuit combining bipolar transistor and JFET's to produce a constant voltage characteristic

Also Published As

Publication number Publication date
US4143392A (en) 1979-03-06
DE2861510D1 (en) 1982-02-25
EP0000975A1 (en) 1979-03-07
EP0000975B1 (en) 1982-01-06
JPS5452994A (en) 1979-04-25

Similar Documents

Publication Publication Date Title
JPS6153861B2 (en])
US4826780A (en) Method of making bipolar transistors
US3293087A (en) Method of making isolated epitaxial field-effect device
US20170271511A1 (en) Embedded JFETs for High Voltage Applications
US4095252A (en) Composite jfet-bipolar transistor structure
US4066917A (en) Circuit combining bipolar transistor and JFET's to produce a constant voltage characteristic
US4322738A (en) N-Channel JFET device compatible with existing bipolar integrated circuit processing techniques
JP4145353B2 (ja) 抵抗素子が設けられている半導体デバイス
US5969391A (en) Complementary insulated-gate field-effect transistors having improved anti-latchup characteristic
US4407005A (en) N-Channel JFET device having a buried channel region, and method for making same
JPH03276757A (ja) 半導体装置
JPS6362904B2 (en])
JPH04225238A (ja) ラテラルトランジスタ及びそれを用いたカレントミラー回路
JPH0235736A (ja) 半導体装置
JPS62104068A (ja) 半導体集積回路装置
JPS63175463A (ja) バイｍｏｓ集積回路の製造方法
JPH01185971A (ja) 絶縁ゲート型半導体装置
JPS59144168A (ja) バイポ−ラｍｏｓ半導体装置及びその製造法
JPH0582828A (ja) フオトトランジスタ
JP2926785B2 (ja) 半導体装置
JP2671304B2 (ja) 論理回路
JPS6224954B2 (en])
JPS6113657A (ja) 半導体装置
JPH01117055A (ja) 相補型絶縁ゲート電界効果半導体装置
JPS6222464B2 (en])